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| Ordering number:ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features * Low ON resistance. * 4V drive. * Mounting height 1.1mm. * Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2007] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Conditions 0.1 1.0 0.5 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Ratings 100 20 0.8 3.2 2 Unit V V A A W W C C Mounted on a ceramic board (1000mm x0.8mm) 1unit Mounted on a ceramic board (1000mm2x0.8mm) 0.6 0.8 150 -55 to +150 Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=400mA ID=400mA, VGS=10V ID=400mA, VGS=4V ID=400mA, VGS=3V 0.8 1.0 1.5 0.6 0.65 0.7 0.8 0.95 1.0 Conditions Ratings min 100 10 10 2.0 typ max Unit V A A V S Marking : D2007 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2501 No.6430-1/4 FTD2007 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=800mA, VGS=0 VDS=10V, VGS=10V, ID=800mA VDS=50V, f=1MHz VDS=50V, f=1MHz VDS=50V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Conditions Ratings min typ 150 30 5 8 4 40 25 5.2 0.6 1.14 0.75 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=50V 10V 0V VIN VIN Electrical Connection D2 S2 S2 G2 ID=400mA RL=125 PW=10s D.C.1% D G VOUT P.G 50 S FTD2007 D1 S1 S1 G1 1.6 ID -- VDS 3.0 8.0V 2.0 1.8 ID -- VGS VDS=10V 1.4 V 6.0V 2.5V 1.6 Drain Current, ID - A Drain Current, ID - A 1.2 4.0 V 10 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 .0V 1.4 1.2 1.0 0.8 2.0V 0.4 0.2 25 0 0.5 1.0 C VGS=1.5V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1.5 2.0 2.5 3.0 IT01120 Drain-to-Source Voltage, VDS - V 1.4 IT01119 1.6 Gate-to-Source Voltage, VGS - V RDS(on) -- VGS Ta=25C ID=400mA RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) - Static Drain-to-Source On-State Resistance, RDS(on) - 1.2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60 1.0 0.8 =4 ID 00m VG A, 0m A 3 S= --25 C V V 10 S= , VG 4V S= 80 100 120 0.6 40 I D= 40 I D= --40 --20 0 20 0.4 0m VG A, 0.2 0 0 1 2 3 4 5 6 7 8 9 10 Gate-to-Source Voltage, VGS - V IT01121 Ambient Temperature, Ta - C 40 60 Ta= 7 0.6 5C 140 160 IT01122 No.6430-2/4 FTD2007 10 yfs -- ID VDS=10V Forward Transfer Admittance, | yfs | - S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 IF -- VSD VGS = 0 1.0 7 5 3 2 0.1 0.01 Ta 25 =- 75 C C 25 C Forward Current, IF - A 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.3 0.6 --25C 3 2 Ta=7 5C 25C 0.9 1.2 1.5 IT01124 Drain Current, ID - A 1000 7 5 IT01123 1000 7 5 3 2 Diode Forward Voltage, VSD - V SW Time -- ID VDD=50V VGS=10V tf td(off) Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 Ciss, Coss, Crss - pF Ciss 100 7 5 3 2 10 7 5 3 2 1.0 Coss td(on) tr Crss 7 0.1 2 3 5 7 1.0 2 IT01125 10 7 5 3 2 0 10 20 30 40 50 60 70 80 90 100 Drain Current, ID - A 10 9 Drain-to-Source Voltage, VDS - V IT01126 VGS -- Qg VDS=10V ID=800mA Drain Current, ID - A ASO IDP=3.2A 1m 100s 10 s Gate-to-Source Voltage, VGS - V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT01127 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 ID=0.8A 10 DC op ms 0m s era tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse 1 unit 2 3 0.001 Mounted on a ceramic board (1000mm2x0.8mm) 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg - nC 1.0 0.1 Drain-to-Source Voltage, VDS - V Allowable Power Dissipation (FET1), PD - W 0.8 5 7 100 2 IT01128 PD -- Ta Mounted on a ceramic board (1000mm2x0.8mm) PD(FET1) -- PD(FET2) Allowable Power Dissipation, PD - W 0.8 0.6 0.6 To tal 0.4 ss ip ati 1u on nit Di 0.4 0.2 0.2 0 0 20 0 0 0.2 0.4 0.6 0.8 Ambient Temperature, Ta - C 40 60 80 100 120 140 160 IT01129 Allowable Power Dissipation (FET2), PD - W IT01130 No.6430-3/4 FTD2007 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6430-4/4 |
Price & Availability of FTD2007
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